vanadium oxide thin films 二氧化钒薄膜
Therefore, formation of high valance vanadium oxide films was obtained.
因此，形成价态更高的钒氧化物薄膜。
At a critical temperature, vanadium oxide films undergo phase transition between metal phase to semi-conducting phase.
在某一特定的温度处，氧化钒薄膜发生金属-半导体相的转变。
As the detecting material of uncooled infrared detectors, vanadium oxide (VOX) thin films need high temperature coefficient of resistance (TCR) and suitable film resistance for using of the device.
氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数(TCR)与合适的电阻值，以满足器件的应用。
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